? 2006 ixys all rights reserved ds99439e(02/06) polarhv tm hiperfet power mosfet isoplus220 tm (electrically isolated back surface) n-channel enhancement mode fast intrinsic diode avalanche rated symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 4 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = i t , note 1 360 m ? symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 600 v v gs continuous 30 v v gsm tranisent 40 v i d25 t c = 25 c12a i dm t c = 25 c, pulse width limited by t jm 66 a i ar t c = 25 c22a e ar t c = 25 c40mj e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 4 ? p d t c = 25 c 130 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms t = 1 minute leads-to-tab 2500 v~ f c mounting force 11..65/2.5..15 n/lb weight 2 g v dss = 600 v i d25 =12 a r ds(on) 360 m ? ? ? ? ? t rr 200 ns ixfc 22n60p (isolated back surface*) g = gate d = drain s = source isoplus220 tm (ixfc) e153432 g d s features l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l low drain to tab capacitance(<35pf) l low r ds (on) hdmos tm process l rugged polysilicon gate cell structure l unclamped inductive switching (uis) rated l fast intrinsic rectifier applications l dc-dc converters l battery chargers l switched-mode and resonant-mode power supplies l dc choppers l ac motor control advantages l easy assembly: no screws, or isolation foils required l space savings l high power density l low collector capacitance to ground (low emi)
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 22n60p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = i t , note 1 13 20 s c iss 4000 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 320 pf c rss 22 pf t d(on) 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i t 20 ns t d(off) r g = 4 ? (external) 60 ns t f 23 ns q g(on) 58 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = i t 23 nc q gd 20 nc r thjc 0.95 c/w r thcs 0.21 c/w source-drain diode characteristic values (t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 12 a i sm repetitive 66 a v sd i f = i s , v gs = 0 v, 1.5 v t rr i f = 25a, -di/dt = 100 a/ s 200 ns q rm v r = 100 v, v gs = 0 v 1.0 c notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. test current i t = 11a. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3.
? 2006 ixys all rights reserved ixfc 22n60p fig. 2. extended output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 45 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 9v 8v 6v 7.5v 7v 6.5v fig. 3. output characteristics @ 125 o c 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 1214 1618 20 v d s - volts i d - amperes v gs = 10v 8v 7v 5.5v 5v 6v 6.5v fig. 1. output characteristics @ 25 o c 0 2 4 6 8 10 12 14 16 18 20 22 0123456789 v d s - volts i d - amperes v gs = 10v 8v 7v 6v 7.5v fig. 4. r ds(on ) norm alize d to i d = 11a value vs. junction tem perature 0.4 0.7 1 1.3 1.6 1.9 2.2 2.5 2.8 3.1 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 22a i d = 11a v gs = 10v fig. 5. r ds(on) norm alize d to i d = 11a value vs . drain curre nt 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 5 10 15 20 25 30 35 40 45 i d - amperes r d s ( o n ) - normalized t j = 125 o c t j = 25 o c v gs = 10v fig. 6. drain curre nt vs . cas e tem perature 0 2 4 6 8 10 12 14 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfc 22n60p fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 1020 30405060 q g - nanocoulombs v g s - volts v ds = 300v i d = 11a i g = 10m a fig. 7. input adm ittance 0 3 6 9 12 15 18 21 24 27 30 4.5 5 5.5 6 6.5 7 7.5 8 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 3 6 9 12 15 18 21 24 27 30 0 3 6 9 12 15 18 21 24 27 30 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. forw ard-bias safe ope rating are a 0.1 1 10 100 10 100 1000 v d s - volts i d - amperes 100s 1ms dc t j = 150oc t c = 25oc r ds(on) lim it 10m s 25s
? 2006 ixys all rights reserved ixfc 22n60p fig. 13. m axim um transie nt the rm al re sis tance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w ixys ref: t_22n60p (6j) 02-17-06-b
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